FMM110-015X2F

Description：MOSFET 2N-CH 150V 53A I4-PAC
Series：GigaMOS™, HiPerFET™, TrenchT2™

SKU:0a06a2b2e332 Category: FET, MOSFET Arrays Brand: IXYS

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Product introduction

FMM110-015X2F is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists IXYS. Its product description is MOSFET 2N-CH 150V 53A I4-PAC. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FMM110-015X2F

Description：MOSFET 2N-CH 150V 53A I4-PAC
Series：GigaMOS™, HiPerFET™, TrenchT2™
Mfr：IXYS
Package：Tube
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：150V
Current - Continuous Drain (Id) @ 25°C：53A
Rds On (Max) @ Id, Vgs：20mOhm @ 55A, 10V
Vgs(th) (Max) @ Id：4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：8600pF @ 25V
Power - Max：180W
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：i4-Pac™-5
Supplier Device Package：ISOPLUS i4-PAC™
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FMM110-015X2F

FMM110-015X2F

FET, MOSFET Arrays Overview

The FMM110-015X2F is a dual N-channel power MOSFET from IXYS, utilizing TrenchT2 and HiPerFET technologies. It features a 150V drain-source voltage (Vds) and a continuous drain current (Id) of 53A. The device is housed in an I4-PAC package with five pins. Key electrical parameters include a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs th) of 4.5V. The typical on-state resistance (Rds(on)) is specified at 24 mΩ. The component supports a power dissipation (Pd) of 960W and operates within a temperature range of -55°C to +150°C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration for efficient bridge or half-bridge applications
TrenchT2 technology ensures low on-resistance and high current capability
HiPerFET design optimizes switching performance for power conversion systems

FET, MOSFET Arrays Applications

Low voltage high current power conversion systems
DC-DC converters
Motor control circuits

FET, MOSFET Arrays Procurement Notes

Verify the manufacturer status as IXYS has been acquired by Littelfuse. Confirm that the specific part number matches the required TrenchT2 HiPerFET specifications. Ensure the I4-PAC package type aligns with your PCB layout requirements. Check RoHS compliance documentation for regulatory adherence. Validate the datasheet version to ensure accurate electrical parameter references.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring dual N-channel MOSFETs with high current handling. The 150V rating suits low-voltage power systems. Consider the 53A continuous current capacity for load requirements. The I4-PAC package offers a compact solution for space-constrained designs. Evaluate thermal management needs given the 960W power dissipation rating.

FET, MOSFET Arrays Part Context

This part belongs to the FMM series of dual N-channel MOSFETs. It utilizes IXYS's proprietary TrenchT2 and HiPerFET technologies. The series is designed for power conversion applications. The I4-PAC package provides a robust mechanical structure. The component is classified under discrete semiconductors.