FMM150-0075P

FET, MOSFET Arrays Overview

The FMM150-0075P is a Trench Power MOSFET from IXYS, rated for VDSS of 75 V and ID25 of 150 A. It features a typical RDS(on) of 3.2 mΩ at VGS = 10 V. The device utilizes the ISOPLUS i4-PAC package with an isolated back surface and low coupling capacity between pins and heatsink. Maximum ratings include VGS of ±20 V, TVJ up to +175 °C, and VISOL of 2500 V~. Thermal resistance RthJC is 0.6 K/W.

FET, MOSFET Arrays Feature Summary

• Trench MOSFET technology providing very low on-state resistance and fast switching capabilities.
• ISOPLUS i4-PAC package design featuring an isolated back surface and enlarged creepage distance towards the heatsink.
• Low inductive current path and industry standard outline ensuring high reliability and application-friendly pinout.

FET, MOSFET Arrays Applications

• Automotive AC drives and starter generators for 42V systems
• DC-DC converters operating between 12V and 42V systems
• Solar inverters and power supplies
• Battery chargers and choppers for handheld tool drives

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package type matches ISOPLUS i4-PAC and ensure thermal interface material compatibility for optimal heat transfer. Validate electrical parameters such as RDS(on) and breakdown voltage during incoming inspection to guarantee compliance with operational requirements.

FET, MOSFET Arrays Selection Notes

Select this component for applications requiring high current handling and low conduction losses at 75 V. Consider the specific gate charge and switching energy values when designing driver circuits. Ensure the PCB layout accommodates the unique pin configuration of the ISOPLUS i4-PAC package to maximize thermal performance and minimize parasitic inductance.

FET, MOSFET Arrays Part Context

This part belongs to the IXYS Trench Power MOSFET series, designed for phase-leg topology applications. It integrates advanced trench technology within a specialized isolated package to enhance efficiency and reliability in power conversion systems. The device is engineered to replace traditional components in automotive and industrial power electronics.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum isolation voltage (VISOL) for the FMM150-0075P?

The maximum isolation voltage is 2500 V~ at IISOL ≤ 1 mA and 50/60 Hz.

What is the typical reverse recovery time (trr) of the body diode?

The typical reverse recovery time is 90 ns under conditions of IF = 20A, -di/dt = 100A/µs, and VDS = 30V.

How does the junction temperature range affect the device operation?

The device supports a junction temperature range from -55 °C to +175 °C, allowing operation in extreme thermal environments while maintaining specified electrical characteristics.