FMM50-025TF

FET, MOSFET Arrays Overview

The FMM50-025TF is a phase leg MOSFET module manufactured by IXYS, designed for high-power switching applications. It integrates two N-channel power MOSFETs in a half-bridge configuration within an ISOPLUS-i4-PAK-5 package. The device supports a drain-source breakdown voltage of 250 V and delivers a continuous drain current of 30 A. Key electrical characteristics include a maximum on-resistance of 60 mOhms and a gate charge of 78 nC. It operates reliably across a temperature range from -55 °C to +150 °C with a power dissipation rating of 125 W.

FET, MOSFET Arrays Feature Summary

• Integrates a half-bridge topology with two N-channel MOSFETs for efficient phase leg control
• Utilizes the ISOPLUS-i4-PAK-5 package to provide robust thermal management and low inductance
• Features enhanced gate technology to optimize switching performance and reduce drive losses

FET, MOSFET Arrays Applications

• Motor drive inverters
• Switched-mode power supplies (SMPS)
• DC-DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific manufacturer designation, as documentation indicates availability from both IXYS and Littelfuse due to corporate acquisition. Confirm that the component matches the ISOPLUS-i4-PAK-5 package outline and pinout requirements for your PCB layout. Ensure the selected variant meets the required 250V voltage class and 30A current handling specifications for your thermal design calculations.

FET, MOSFET Arrays Selection Notes

Select this component when a compact half-bridge solution is required for medium-voltage applications up to 250 V. The integrated nature reduces board space compared to discrete components. Consider the 60 mOhm on-resistance for conduction loss analysis and the 78 nC gate charge for driver capability assessment. The wide operating temperature range supports demanding industrial environments.

FET, MOSFET Arrays Part Context

This part belongs to the IXYS MOSFET product line, specifically categorized as a phase leg module. It serves as a pre-assembled power stage element, simplifying the design of bridge circuits. The use of silicon technology ensures standard compatibility with existing gate drive interfaces while providing the necessary ruggedness for power electronics systems.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.