FMM65-015P

FET, MOSFET Arrays Overview

The FMM65-015P is a Trench Power MOSFET designed for phase-leg topology applications. It features a maximum drain-source voltage (VDSS) of 150 V and a continuous drain current (ID25) of 65 A at 25°C case temperature. The device exhibits a typical on-state resistance (RDSon) of 12 mΩ at VGS = 10 V. Packaged in the ISOPLUS i4-PACTM format, it supports a junction temperature range from -55°C to +175°C. Key electrical characteristics include a total gate charge (Qg) of 230 nC and a thermal resistance junction-to-case (RthJC) of 0.6 K/W.

FET, MOSFET Arrays Feature Summary

• Trench MOSFET technology providing very low on-state resistance and fast switching capabilities.
• ISOPLUS i4-PAC package with an isolated back surface and low coupling capacity between pins and heatsink.
• Fast body diode performance suitable for high-frequency power conversion.
• Industry standard outline with application-friendly pinout and low inductive current path.

FET, MOSFET Arrays Applications

• Automotive and industrial vehicle drives
• AC drives and choppers replacing series resistors
• DC-DC converters and electronic switches
• Solar inverters and battery chargers

FET, MOSFET Arrays Procurement Notes

Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revision status as the document indicates 'Not for new design' and 'Preliminary data'. Ensure compliance with UL registration E 72873 requirements for the specific ISOPLUS i4-PAC package variant. Validate thermal interface material specifications against the RthJH value of 1.2 K/W for accurate heat dissipation calculations.

FET, MOSFET Arrays Selection Notes

Select this component for phase-leg topologies requiring robust isolation and high current handling. The ISOPLUS i4-PAC package offers superior creepage distances and reduced parasitic inductance compared to standard modules. Evaluate thermal management needs based on the 0.6 K/W junction-to-case resistance. Consider the 150 V rating and 65 A current capability for automotive traction or industrial motor control systems operating within the specified temperature limits.

FET, MOSFET Arrays Part Context

The FMM65-015P belongs to the IXYS Trench Power MOSFET family utilizing ISOPLUS i4-PAC packaging. This series targets high-efficiency power conversion where electrical isolation between the circuit and heatsink is critical. The component integrates a fast-recovery body diode, making it suitable for synchronous rectification and hard-switching applications in demanding environments like electric vehicles and renewable energy inverters.

FET, MOSFET Arrays Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum isolation voltage for the ISOPLUS i4-PAC package?

The maximum isolation voltage (VISOL) is 2500 Vrms when tested at IISOL ≤ 1 mA and 50/60 Hz frequency.

How does the package design reduce electromagnetic interference?

The ISOPLUS i4-PAC package features a low inductive current path and low coupling capacity (40 pF) between shorted pins and the mounting tab, which minimizes parasitic effects during switching.

What is the reverse recovery time of the internal body diode?

The reverse recovery time (trr) is typically 130 ns, measured at IF = 20A, -di/dt = 100A/µs, and VDS = 30V.