FMMT38CTC

Single Bipolar Transistors Overview

The FMMT38CTC is an NPN silicon planar medium power Darlington transistor manufactured by Diodes Incorporated. It operates within a collector-emitter voltage of 60 V and supports a continuous collector current of 300 mA, with peak pulse currents reaching 800 mA. The device provides a static forward current transfer ratio (hFE) ranging from 5000 to 10000 at specified test conditions. Power dissipation is rated at 330 mW at 25°C ambient temperature. It is housed in an SOT-23 surface-mount package and functions reliably across a junction and storage temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability up to 10,000 at 500 mA collector current
• Robust 60 V collector-emitter breakdown voltage rating
• Designed for medium power applications with 330 mW thermal dissipation capacity
• Utilizes silicon planar technology for stable switching performance

Single Bipolar Transistors Applications

• General-purpose switching circuits requiring high gain
• Driver stages for relays or solenoids
• Power amplifier output stages
• Logic-to-power interface buffers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through official datasheets prior to integration. Ensure component authenticity by sourcing from authorized distributors only. Cross-reference part markings with official marking guides to validate device identity during incoming inspection processes.

Single Bipolar Transistors Selection Notes

Select this component when high current gain is required to drive loads directly from low-current logic signals. The FMMT38C variant offers superior hFE compared to older A or B series versions. Consider the SOT-23 package constraints for thermal management in dense PCB layouts. Evaluate saturation voltage requirements at target load currents to ensure adequate headroom in the circuit design.

Single Bipolar Transistors Part Context

This device belongs to the FMMT38 series of NPN Darlington transistors. The 'C' suffix denotes the specific gain binning tier, offering higher minimum gain than the 'A' or 'B' variants. The 'T' typically indicates tape-and-reel packaging configuration. This series replaces older designs not recommended for new engineering projects.

Single Bipolar Transistors Replacement Considerations

Official substitutes include other NPN Darlington transistors in SOT-23 packages with comparable VCEO and IC ratings. Verify pinout compatibility and thermal resistance characteristics before substitution. Check if alternative manufacturers offer equivalent gain bins for direct replacement without circuit modification.