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FMMT459QTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 450V 0.15A SOT-23-3. Review the specifications below when checking this part for your BOM.
The FMMT459QTA is a single NPN Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 450 V and a collector-base voltage (VCBO) of 500 V. The device supports a continuous collector current (IC) of 150 mA with a peak pulse current (ICM) up to 500 mA. Power dissipation ratings are 625 mW under steady-state conditions and 806 mW for short pulses. The transition frequency (fT) is 50 MHz, and the saturation voltage (VCE(sat)) is less than 90 mV at 50 mA. It operates within a temperature range of -55°C to +150°C.
Verify that the specific part number suffix matches the required automotive qualification level. Confirm package dimensions against SOT-23 specifications if PCB layout constraints are critical. Ensure compliance with RoHS and halogen-free requirements as defined by the manufacturer's green product definitions. Check datasheet notes regarding PPAP capability if your manufacturing process requires it.
Select this component when high voltage isolation is required in a compact surface-mount footprint. The low saturation voltage makes it suitable for efficient switching applications. Consider the thermal resistance values when designing heat dissipation strategies for steady-state versus pulsed operation modes.
This transistor belongs to the FMMT459 series from Diodes Incorporated. It is designed specifically to meet stringent automotive application requirements. The device utilizes a molded plastic case with matte tin plated leads. It is totally lead-free and fully RoHS compliant.
No verified substitute part numbers are documented in the provided source material.
The maximum collector-base breakdown voltage (BVCBO) is 500 V.
Yes, the FMMT459QTA is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
The typical turn-off time (toff) is 3450 ns under specified test conditions.
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