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Product Detailed Parameters
- Description：RF TRANS NPN 12V 2GHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：2GHz
- Noise Figure (dB Typ @ f)：4.5dB @ 200MHz
- Gain：15dB
- Power - Max：330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 3mA, 1V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The FMMT5179TA is an NPN silicon planar high-frequency transistor manufactured by Diodes Incorporated. It operates within a collector-emitter voltage of 12 V and a collector-base voltage of 20 V, with a continuous collector current limit of 50 mA. The device features a minimum transition frequency (fT) of 900 MHz and a maximum collector-base capacitance of 1 pF. Power dissipation is rated at 330 mW across an operating temperature range of -55°C to +150°C. Packaged in SOT-23, it supports low-noise applications with a noise figure of 4.5 dB.
Feature Summary
- High transition frequency capability for RF signal processing
- Low noise figure suitable for sensitive receiver stages
- Minimal collector-base capacitance for high-speed switching
Applications
- RF amplifier circuits
- Low-noise front-end modules
- High-frequency oscillator designs
Procurement Notes
Verify the component datasheet against the manufacturer's official documentation before integration. Confirm that the SOT-23 package dimensions align with the PCB footprint requirements. Ensure thermal management strategies accommodate the 330 mW power dissipation rating under expected operating conditions.
Selection Notes
Select this component when circuit design requires high-frequency performance combined with low noise characteristics. Evaluate the 12 V collector-emitter voltage limit against peak signal swings. Consider the 50 mA continuous current constraint for load driving capabilities in the target application environment.
Part Context
This part belongs to the FMMT series of small-signal transistors produced by Diodes Incorporated. It utilizes standard silicon planar technology housed in a compact SOT-23 surface-mount package. The device is designed specifically for high-frequency analog and RF applications requiring stable gain and minimal signal degradation.
Replacement Considerations
Direct substitutes include other NPN high-frequency transistors with comparable fT ratings and SOT-23 packaging. Verify pinout compatibility and electrical parameter overlaps before substitution.
