FMMT5179TC

Overview

The FMMT5179TC is an NPN silicon planar high-frequency transistor manufactured by Diodes Incorporated. It operates within a collector-emitter voltage range of 12 V and supports a continuous collector current of 50 mA with 330 mW power dissipation. The device features a minimum transition frequency (fT) of 900 MHz, reaching up to 2000 MHz under specified conditions. Key electrical parameters include a maximum collector-base capacitance of 1 pF and a noise figure of 4.5 dB at 200 MHz. The component is housed in a surface-mount SOT-23 package.

Feature Summary

• High transition frequency capability for RF applications
• Low noise figure suitable for sensitive signal processing
• Minimal collector-base capacitance for high-speed switching

Applications

• RF amplifier stages
• High-frequency oscillator circuits
• Low-noise front-end modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging configuration and tape-and-reel specifications. Ensure that the requested variant matches the required RoHS compliance status and marking details before finalizing procurement orders.

Selection Notes

Select this component when circuit designs require high gain-bandwidth products and low noise characteristics in a compact surface-mount footprint. Evaluate thermal management requirements carefully due to the 330 mW power dissipation limit in the small SOT-23 package.

Part Context

This part belongs to the FMMT series of high-frequency NPN transistors produced by Diodes Incorporated. The 'TC' suffix typically denotes a specific tape and reel packaging format intended for automated surface-mount assembly processes.

Replacement Considerations

Consult official substitution lists from Diodes Incorporated for verified equivalents. Cross-reference pinouts and electrical limits if considering alternatives from other manufacturers.