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The FMMV105GTA is a silicon planar variable capacitance diode manufactured by Diodes Incorporated, housed in an SOT23 package. It operates within a temperature range of -55 to +150 °C with a power dissipation rating of 330 mW at 25°C ambient. Key electrical specifications include a reverse breakdown voltage of 30 V and a reverse current of 10 nA at 28 V. At 25 V reverse bias, the diode capacitance ranges from 1.8 to 2.8 pF. The device exhibits a capacitance ratio between 4.0 and 6.0 when transitioning from 3 V to 25 V reverse bias. Series inductance is specified at 3.0 nH at 250 MHz.
Verify the component marking '4EZ' on the SOT23 package to confirm authenticity. Ensure the supplier provides documentation confirming compliance with RoHS standards as indicated by the 'G' suffix. Cross-reference the datasheet issue date and revision history to ensure technical accuracy during integration.
Select this component for applications requiring a compact SOT23 footprint with precise capacitance control. Evaluate the capacitance ratio and Q factor against the specific frequency requirements of the target circuit. Confirm that the operating voltage range aligns with the specified reverse bias conditions for optimal tuning linearity.
This device belongs to the family of silicon planar variable capacitance diodes designed for RF and microwave applications. It serves as a voltage-variable capacitor (varactor) where capacitance changes inversely with applied reverse voltage. The SOT23 package allows for surface-mount assembly in space-constrained electronic designs.
Consult official substitution lists or equivalent varactor diodes with matching SOT23 packages and similar capacitance ratios. Verify that alternative components meet the same reverse breakdown voltage and series inductance specifications to maintain circuit performance integrity.