FMMV105GTA

FMMV105GTA

  • Description:DIODE VARI CAP 30V 2.8PF SOT23-3
  • Series:-

SKU:f6f063d7b572 Category: Brand:

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Product Detailed Parameters

  • Description:DIODE VARI CAP 30V 2.8PF SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • Capacitance @ Vr, F:2.8pF @ 25V, 1MHz
  • Capacitance Ratio:6
  • Capacitance Ratio Condition:C3/C25
  • Voltage - Peak Reverse (Max):30 V
  • Diode Type:Single
  • Q @ Vr, F:350 @ 3V, 50MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

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FMMV105GTA

Overview

The FMMV105GTA is a silicon planar variable capacitance diode manufactured by Diodes Incorporated, housed in an SOT23 package. It operates within a temperature range of -55 to +150 °C with a power dissipation rating of 330 mW at 25°C ambient. Key electrical specifications include a reverse breakdown voltage of 30 V and a reverse current of 10 nA at 28 V. At 25 V reverse bias, the diode capacitance ranges from 1.8 to 2.8 pF. The device exhibits a capacitance ratio between 4.0 and 6.0 when transitioning from 3 V to 25 V reverse bias. Series inductance is specified at 3.0 nH at 250 MHz.

Feature Summary

  • Utilizes silicon planar technology for stable variable capacitance performance
  • Provides high quality factor (Q) for efficient RF tuning applications
  • Features low series inductance suitable for high-frequency operation

Applications

  • RF tuning circuits requiring variable capacitance
  • Voltage-controlled oscillators (VCOs)
  • Frequency synthesizers and phase-locked loops (PLLs)

Procurement Notes

Verify the component marking '4EZ' on the SOT23 package to confirm authenticity. Ensure the supplier provides documentation confirming compliance with RoHS standards as indicated by the 'G' suffix. Cross-reference the datasheet issue date and revision history to ensure technical accuracy during integration.

Selection Notes

Select this component for applications requiring a compact SOT23 footprint with precise capacitance control. Evaluate the capacitance ratio and Q factor against the specific frequency requirements of the target circuit. Confirm that the operating voltage range aligns with the specified reverse bias conditions for optimal tuning linearity.

Part Context

This device belongs to the family of silicon planar variable capacitance diodes designed for RF and microwave applications. It serves as a voltage-variable capacitor (varactor) where capacitance changes inversely with applied reverse voltage. The SOT23 package allows for surface-mount assembly in space-constrained electronic designs.

Replacement Considerations

Consult official substitution lists or equivalent varactor diodes with matching SOT23 packages and similar capacitance ratios. Verify that alternative components meet the same reverse breakdown voltage and series inductance specifications to maintain circuit performance integrity.

FMMV105GTAFMMV105GTA

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