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Product Detailed Parameters
- Description：DIODE VARI CAP 30V 6.8PF SOT23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Capacitance @ Vr, F：7.5pF @ 4V, 1MHz
- Capacitance Ratio：3.3
- Capacitance Ratio Condition：C2/C30
- Voltage - Peak Reverse (Max)：30 V
- Diode Type：Single
- Q @ Vr, F：450 @ 4V, 50MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
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Overview
The FMMV2101TA is a silicon planar variable capacitance diode manufactured by Diodes Incorporated, housed in an SOT-23 package. It features a reverse breakdown voltage of 30 V and a nominal capacitance of 6.8 pF at 4 V reverse bias. The device exhibits a Q figure of merit between 450 and 2.5 at 50 MHz, with a turning ratio (C2/C30) ranging from 2.5 to 3.3. Operating temperature spans -55°C to +150°C, supporting applications requiring stable tuning characteristics under varying thermal conditions.
Feature Summary
- Utilizes silicon planar technology for consistent variable capacitance performance
- Provides defined tuning ratios and quality factors for RF circuit stability
- Operates within extended industrial temperature ranges
Applications
- RF tuning circuits
- Voltage-controlled oscillators
- Frequency synthesizers
Procurement Notes
Verify the component against official datasheets to confirm pin configuration and electrical tolerances. Ensure the ordering suffix matches the required reel packaging specifications. Cross-reference part markings with manufacturer documentation to validate authenticity before integration into production systems.
Selection Notes
Select this component based on its specific nominal capacitance value and Q factor requirements for the target frequency range. Evaluate the turning ratio to ensure sufficient tuning range for the application. Confirm that the series inductance and case capacitance parameters align with high-frequency design constraints.
Part Context
This component belongs to the FMMV210x series of variable capacitance diodes, which includes variants with different nominal capacitance values. The series shares common packaging and basic electrical ratings while offering distinct tuning characteristics tailored for various RF applications.
Replacement Considerations
Direct substitutes include other FMMV210x series devices such as FMMV2103 or FMMV2104 if higher capacitance is acceptable. Verify compatibility regarding package type and electrical parameters before substitution.
FAQ
What is the nominal capacitance of the FMMV2101TA?
The nominal capacitance is 6.8 pF at a reverse voltage of 4 V and a frequency of 1 MHz.
What is the maximum operating temperature?
The maximum operating junction and storage temperature is +150°C.
What is the typical Q figure of merit?
The Q figure of merit typically ranges from 450 to 2.5 at 50 MHz with a reverse voltage of 4 V.
