FMP76-010T

FET, MOSFET Arrays Overview

The FMP76-010T is a power field-effect transistor manufactured by IXYS. It features a Trench P and N-Channel Power MOSFET common drain topology. The device integrates two elements in a single package, providing both high-side and low-side switching capabilities with an integrated body diode structure.

FET, MOSFET Arrays Feature Summary

• Integrates complementary P-channel and N-channel MOSFETs in a single package for simplified circuit design
• Utilizes Trench technology to achieve low on-resistance and efficient switching performance
• Employs a common-drain topology suitable for synchronous rectification applications

FET, MOSFET Arrays Applications

• Synchronous rectifier circuits in DC-DC converters
• High-efficiency power supply designs requiring complementary switching
• Motor control systems utilizing half-bridge configurations

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and thermal characteristics before integration. Confirm that the common-drain configuration aligns with the target circuit topology. Ensure compatibility with gate drive requirements for both P-channel and N-channel elements within the dual package.

FET, MOSFET Arrays Selection Notes

Select this component when a compact solution for complementary switching is required. The common-drain arrangement reduces board space compared to discrete pairs. Evaluate thermal management needs based on the combined power dissipation of both channels during operation.

FET, MOSFET Arrays Part Context

This component belongs to IXYS' portfolio of power MOSFETs designed for high-efficiency power conversion. The FMP series utilizes advanced trench technology to minimize conduction losses. It serves as a specialized solution for applications demanding integrated complementary switching capabilities.