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The FMS6G10US60 is a six-pack Insulated Gate Bipolar Transistor (IGBT) module manufactured by onsemi, formerly Fairchild Semiconductor. It features a 600V collector-emitter breakdown voltage and a continuous collector current of 10A. The device has a maximum power dissipation of 66W and an on-state collector-emitter voltage of 2.7V at 15V gate drive and 10A current. Input capacitance is 710pF at 30V. It operates within a junction temperature range of -40°C to 150°C and utilizes the 25PM-AA flange-mount package.
This component is officially listed as obsolete or discontinued by the manufacturer. Verification of availability requires checking secondary market distributors or surplus suppliers. Ensure that any sourced units are genuine and have not exceeded storage life limits. Confirm the specific revision level matches the original design requirements before procurement.
Select this module for low-power three-phase applications requiring 600V blocking capability. The 10A rating suits smaller motor control systems. Verify that the 2.7V Vce(on) fits the thermal budget. The integrated NTC sensor simplifies temperature management compared to modules without thermal feedback. Ensure the 25PM-AA footprint is compatible with the existing heatsink design.
The FMS6 series represents a family of compact IGBT modules designed for cost-effective power conversion. This specific part integrates six discrete IGBT chips into a single insulated package. It bridges the gap between discrete components and larger high-power modules, offering a balance of performance and size for mid-range industrial electronics.
Verify pinout compatibility when substituting. Check if alternative packages like 25PM-CA or 25PM-BB require mechanical adaptation. Ensure replacement parts maintain the same 600V/10A ratings and Vce(on) characteristics to preserve system efficiency.