FP06R12W1T4B3BOMA1

Overview

The FP06R12W1T4_B3 is a three-phase inverter IGBT module from Infineon's EasyPIM series, utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a 1200 V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 6 A at 100°C case temperature, rising to 12 A at 25°C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. Key electrical parameters include a maximum total power dissipation of 94 W at 25°C, a typical VCEsat of 1.5 V at 25°C for 6 A, and a switching frequency capability suitable for auxiliary applications.

Feature Summary

• Integrates Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes for low switching losses and positive temperature coefficient saturation voltage.
• Features an Al2O3 substrate with low thermal resistance and compact design for efficient heat transfer.
• Includes integrated mounting clamps for rugged mechanical assembly and solder contact technology.
• Incorporates an internal NTC thermistor for precise junction temperature monitoring.

Applications

• Auxiliary inverters
• Air conditioning systems
• Motor drives

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm exact configuration details. Ensure compliance with RoHS standards and check for any REACH SVHC substance declarations relevant to your region. Confirm that the component status remains active or available before finalizing procurement plans.

Selection Notes

Select this module for applications requiring a compact three-phase inverter solution with integrated protection and monitoring. Consider the 1200 V rating and 6 A nominal current limits when designing the thermal management system. Verify that the gate drive requirements align with the specified VGE thresholds and internal gate resistance characteristics.

Part Context

This component belongs to the EasyPIM family, which combines power semiconductors with control electronics in a single package. The FP06R12W1T4_B3 specifically utilizes the IGBT4 generation technology, offering improved switching performance compared to previous generations. It is designed for industrial applications where space constraints and thermal efficiency are critical factors.

Replacement Considerations

Direct replacements within the EasyPIM series should be evaluated based on matching voltage ratings, current capabilities, and pinout configurations. Verify compatibility with existing gate drive circuits and thermal interface materials when substituting similar models.

FAQ

What is the maximum junction temperature for the rectifier section?

The maximum junction temperature for the rectifier section is 150°C, while the inverter and brake-chopper sections support up to 175°C.

How does the module handle short-circuit conditions?

The module can withstand a short-circuit current of 35 A for up to 10 µs at a junction temperature of 150°C, provided the gate-emitter voltage is limited to 15 V.

What is the isolation test voltage of the module?

The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute, ensuring basic insulation according to EN61140 Class 1 standards.