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The FP100R07N2E4BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 - E4 series. It utilizes the EconoPIM trademark packaging and features a three-phase input rectifier topology. The device is rated for a collector-emitter maximum voltage (VCEO) of 650 V and supports a continuous collector current of 100 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.95 V and a power dissipation capacity of 380 W. The module operates within a temperature range of -40°C to +150°C and employs PressFIT technology for mounting.
Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm exact configuration details. Ensure compatibility with PressFIT installation tools and verify thermal interface requirements for the EconoPIM package before procurement.
Select this component for applications requiring a 650 V, 100 A rating in a three-phase rectifier configuration. Consider the 1.95 V saturation voltage for conduction loss calculations and ensure the system can accommodate the +150°C maximum junction temperature capability.
This module is part of the Infineon EconoPIM family, which focuses on compact, easy-to-integrate designs. It complements other IGBT modules like the FP50R07N2E4BPSA1 and FP100R07N3E4 by offering specific three-phase rectifier functionality within the same technological generation.
Check for direct replacements within the IGBT4 - E4 series. Verify pinout and thermal characteristics if considering alternatives like the FP100R07N3E4, noting that suffix changes may indicate different packaging or terminal configurations.