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Product Detailed Parameters
- Description：IGBT MOD 650V 150A 430W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：Trench Field Stop
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 150A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：150 A
- Power - Max：430 W
- Current - Collector Cutoff (Max)：1 mA
- Input Capacitance (Cies) @ Vce：9.3 nF @ 25 V
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Overview
The FP150R07N3E4B11BOSA1 is an EconoPIM™3 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage of 650 V, a continuous DC collector current of 150 A at 55°C case temperature, and a repetitive peak collector current of 300 A. The total power dissipation is rated at 430 W with a maximum junction temperature of 175°C. Key electrical parameters include a typical saturation voltage of 1.55 V and gate charge of 1.5 µC. The module incorporates PressFIT contact technology and an integrated NTC thermistor for thermal monitoring.
Feature Summary
- Trench/Fieldstop IGBT4 technology combined with an Emitter Controlled Diode
- High short-circuit capability with self-limiting short-circuit current
- PressFIT connection technology for reliable mounting
- Integrated NTC temperature sensor for thermal management
Applications
- Motor drives
- Three-phase inverter circuits
- Brake chopper applications
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact configuration and revision status. Ensure compatibility with existing system interfaces and thermal requirements before procurement. Cross-reference datasheet specifications with actual application conditions to validate performance margins.
Selection Notes
Select this module for applications requiring high blocking voltage and robust short-circuit handling. Consider the 650V rating and 150A continuous current capacity relative to load demands. Evaluate thermal resistance values and ensure adequate heatsinking to maintain junction temperatures within the specified operational range.
Part Context
This component belongs to the EconoPIM™3 series from Infineon Technologies. It utilizes advanced IGBT4 technology designed for efficient power conversion. The module integrates both switching and rectifying elements into a single compact package suitable for industrial power electronics.
Replacement Considerations
Consult official Infineon replacement guides for verified substitutes. Ensure any alternative part matches the required voltage, current ratings, and physical footprint. Verify that thermal characteristics and pin configurations are compatible with the existing design.
FAQ
What is the maximum junction temperature for the inverter section?
The maximum junction temperature (Tvj max) for the inverter and brake-chopper sections is 175°C.
Does the module include an integrated temperature sensor?
Yes, the module features an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C.
What is the recommended minimum gate resistance for operation?
For operation with Vge = 0V/+15V, a minimum Rgon and Rgoff of 24 Ohms is recommended.
