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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP150R07N3E4PB11BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trench/Fieldstop IGBT4 - E4 series. It utilizes the EconoPIM PressFIT package and features a 3-Phase Inverter configuration. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current of 150 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.55 V and a gate-emitter leakage current of 400 nA. Power dissipation is rated at 430 W, with an operating temperature range spanning from -40°C to +150°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status prior to integration. Ensure handling procedures align with moisture sensitivity level requirements. Cross-reference datasheet specifications against application constraints to validate suitability for the intended operational environment.
Select this module for applications requiring high current density and efficient thermal management within a compact footprint. The PressFIT interface simplifies assembly compared to traditional screw-mounted alternatives. Evaluate thermal resistance characteristics against system cooling capabilities to ensure reliable operation under maximum load conditions.
This component is part of Infineon's EconoPIM family, designed for high-power density applications. It represents an evolution in IGBT module design, combining robust electrical performance with mechanical simplicity. The specific model targets industrial markets demanding reliable three-phase power conversion solutions.
Public confirmed substitute part numbers are not available in the provided documentation.