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The FP15R12KE3BOMA1 is a single IGBT module from Infineon Technologies, utilizing Trenchstop IGBT3 technology. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 15 A at 25°C. The saturation voltage is typically 1.7 V. The device operates within a junction temperature range of -40°C to +150°C and has a total power dissipation of 65 W at 25°C case temperature. It is housed in an EconoPACK™ 2 package with screw mounting.
Verify the specific suffix BOMA1 against official datasheets to confirm packaging and moisture sensitivity levels. Ensure compatibility with existing gate drive requirements and thermal interface materials. Cross-reference the part number with manufacturer databases to confirm current production status and availability before finalizing procurement plans.
Select this component for applications requiring high reliability and moderate current handling up to 15 A. Consider the 1200 V rating for systems operating with significant voltage transients. Evaluate the thermal resistance characteristics to determine appropriate heatsinking solutions for maintaining junction temperatures within the specified operational limits during continuous duty cycles.
This module belongs to the Trenchstop IGBT3 family, which combines advanced trench gate technology with field-stop structures. The EconoPACK™ 2 series is designed for space-constrained designs, offering low parasitic inductance. This specific part integrates an IGBT chip with an emitter-controlled diode for improved reverse recovery characteristics compared to standard fast recovery diodes.
Direct replacements include other Infineon modules within the same current and voltage ratings, such as the FP15R12KE3 or FP15R12KT3, provided pinouts and thermal characteristics match. Verify that alternative packages maintain the required electrical isolation and mechanical mounting dimensions for the target application.