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The FP15R12KE3GBPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT3 and Emitter Controlled diodes. It features a 1200 V collector-emitter voltage (VCES) with continuous DC collector currents of 15 A at TC=80°C and 25 A at TC=25°C. The inverter IGBT exhibits a saturation voltage (VCEsat) of 1.70 V to 2.15 V, while the rectifier diode has a forward voltage (VF) of 0.90 V. Total power dissipation reaches 105 W at TC=25°C. The module includes an integrated NTC thermistor rated at 5 kΩ ±5% at 25°C for thermal monitoring.
Verify component authenticity by cross-referencing the manufacturer's official datasheet revision history and ordering suffixes. Confirm that the specific BOSA1 designation aligns with current production standards. Ensure compliance with RoHS directives and verify isolation test voltages match application safety requirements before finalizing orders.
Select this module based on its 1200 V blocking capability and 15 A continuous current rating at standard operating temperatures. Evaluate thermal resistance values (RthJC) against the expected junction temperature limits of 125°C. Consider the integrated NTC characteristics for accurate thermal management in high-density designs requiring reliable temperature feedback.
This component belongs to Infineon's EconoPIM™2 series, which combines power semiconductors in a single housing. It utilizes Trenchstop IGBT3 technology, representing a generation focused on balancing low conduction losses with manageable switching speeds. The integration simplifies assembly compared to discrete solutions.
FP15R12KE3G