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The FP15R12KS4CBOSA1 is a single IGBT module from Infineon Technologies, rated at 1200 V collector-emitter voltage and 30 A continuous collector current. It features a saturation voltage of 1.85 V at 25°C and a power dissipation capacity of 180 W. The component utilizes Trench/Fieldstop IGBT4 technology within an EasyPIM package, designed for chassis mounting with a maximum operating junction temperature of 150°C.
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact packaging and variant specifications. Ensure compatibility with existing thermal interface materials and mounting hardware requirements for the EasyPIM form factor before finalizing procurement orders.
Select this module for applications requiring high power density and efficient thermal management in three-phase configurations. Consider the 1200 V rating and 30 A current capability relative to system load demands. Evaluate the integration of the NTC sensor for simplified thermal protection circuitry design.
This component belongs to the EasyPIM series, combining IGBTs and diodes into a single intelligent power module. It represents a solution for compact power electronics designs, offering reduced assembly complexity compared to discrete components while maintaining robust electrical isolation and thermal performance standards.
FP15R12W2T4
The maximum operating junction temperature is 150°C.
Yes, the module includes an integrated NTC temperature sensor for thermal monitoring.