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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP15R12KT3BOSA1 is a single IGBT module with an integrated diode, manufactured by Infineon Technologies. It features a collector-emitter voltage of 1200 V and a continuous DC collector current of 15 A at 80°C case temperature. The module incorporates an NTC thermistor for thermal monitoring. Key electrical parameters include a maximum total power dissipation of 105 W at 25°C, a typical collector-emitter saturation voltage of 1.70 V at 25°C, and a gate threshold voltage ranging from 5.0 V to 6.5 V. The junction-to-case thermal resistance is 1.20 K/W for the IGBT and 1.50 K/W for the diode.
Verify the component against official Infineon datasheets to confirm technical specifications and authenticity. Ensure that the ordering suffix matches the required packaging configuration. Cross-reference the manufacturer part number with authorized distribution channels to guarantee supply chain integrity and compliance with industrial standards.
Select this module based on the 1200 V blocking voltage and 15 A continuous current rating suitable for medium-power switching applications. Evaluate the thermal resistance values to ensure adequate heatsinking for the intended duty cycle. Confirm that the gate drive requirements align with the specified threshold voltage and charge characteristics for optimal switching performance.
This component belongs to the FP series of IGBT modules produced by Infineon Technologies. The series is designed for industrial power electronics, offering high reliability and efficiency. The specific model integrates both switching and freewheeling functions within a compact module package, facilitating easier system integration compared to discrete components.
Consult official Infineon documentation for verified substitute part numbers. Do not assume compatibility with other manufacturers' models without rigorous electrical and thermal validation.