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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP15R12W1T4P_B11 is an EasyPIM module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 15 A at TH = 100°C, and a repetitive peak collector current of 30 A. The saturation voltage (VCEsat) ranges from 1.85 V to 2.25 V depending on temperature. Operating junction temperatures span -40°C to 150°C. The module includes a pre-applied thermal interface material and an integrated NTC thermistor rated at 5.00 kΩ.
Verify the specific ordering suffix against official Infineon documentation to confirm the inclusion of PressFIT contacts and pre-applied TIM. Ensure that the procurement channel provides original manufacturer components to guarantee compliance with RoHS standards and product authenticity. Cross-reference the datasheet revision date with the component marking code to validate production batches.
Select this module for applications requiring a compact three-phase inverter configuration with integrated braking chopper capabilities. The device supports operation up to 150°C junction temperature and utilizes a positive temperature coefficient for VCEsat. Verify that the system design accommodates the 25A RMS limit per connector pin during continuous operation.
This component belongs to the EasyPIM family utilizing Infineon's fourth-generation Trenchstop IGBT technology. It combines power switching elements with control circuitry interfaces in a single package. The series is designed for high-efficiency power conversion in industrial and commercial environments requiring robust thermal management.
Direct replacements must match the 1200V rating, 15A nominal current, and EasyPIM form factor. Verify compatibility of the PressFIT termination style and ensure equivalent thermal resistance values are maintained for the heatsink interface.
The module can withstand a short-circuit condition for a maximum duration of 10 µs at a junction temperature of 150°C.
The isolation test voltage is 2.5 kV RMS at 50 Hz for a duration of 1 minute.
The gate-emitter leakage current is specified as a maximum of 100 nA when measured at 25°C with a gate-emitter voltage of 20 V.