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The FP25R12KS4CBOSA1 is a Power Integrated Module (PIM) from Infineon Technologies, integrating three distinct semiconductor functions within a single housing. It comprises a rectifier diode rated for 1600 V and 25 A DC current, an inverter IGBT with a 1200 V collector-emitter voltage and 25 A nominal current, and a brake-chopper IGBT rated at 1200 V and 12.5 A nominal current. The module utilizes IGBT technology with integrated freewheeling diodes and features an NTC thermistor for thermal monitoring. Key electrical parameters include a maximum junction temperature of 150°C, a total power dissipation of 230 W for the inverter section, and an insulation test voltage of 2.5 kV RMS.
Verify the specific ordering suffix against official documentation to confirm exact pinout and terminal configuration. Ensure that the component matches the required voltage ratings and thermal characteristics for the target application before integration.
Select this module when space constraints require combining rectification, inversion, and braking functions. Consider the 1600 V rating of the rectifier stage for high-line voltage applications and verify that the 1200 V rating of the switching stages aligns with the DC bus voltage requirements.
This component belongs to the FP series of Power Integrated Modules designed by Infineon Technologies. These modules are engineered to reduce system complexity by consolidating multiple power stages. The specific model integrates standard IGBT chips with fast recovery diodes to optimize switching performance and thermal efficiency.
Public confirmed substitute part numbers: None available.