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Product Detailed Parameters
- Description：LOW POWER ECONO
- Series：EconoPIM™ 2
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 25A
- Input：Three Phase Bridge Rectifier
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-ECONO2-8
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：40 A
- Power - Max：105 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：1.8 nF @ 25 V
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Overview
The FP25R12KT3BPSA1 is a three-phase inverter IGBT module with an integrated brake chopper and rectifier. It features a collector-emitter voltage of 1200 V, continuous DC collector current of 25 A at 80°C, and repetitive peak collector current of 50 A. The collector-emitter saturation voltage is typically 1.70 V at 25°C and 1.90 V at 125°C for the inverter leg. Total power dissipation reaches 155 W at 25°C case temperature. Operating junction temperature ranges from -40°C to 125°C. The module includes an NTC thermistor rated at 5 kΩ at 25°C.
Feature Summary
- Integrated three-phase inverter topology with dedicated brake chopper and rectifier circuits
- Built-in NTC thermistor for precise thermal monitoring and protection
- High short-circuit capability supporting robust fault handling
Applications
- Industrial motor drives and variable frequency drives
- Uninterruptible power supply systems
- Induction heating equipment
Procurement Notes
Verify component authenticity through authorized Infineon distribution channels. Confirm datasheet revision alignment during integration. Ensure proper handling protocols are followed due to semiconductor sensitivity. Cross-reference ordering suffixes against official documentation before procurement.
Selection Notes
Evaluate thermal resistance requirements against system cooling capabilities. Verify gate drive voltage compatibility with specified ±15 V limits. Assess stray inductance constraints within the circuit layout. Confirm operating temperature range suitability for the intended environment.
Part Context
This component belongs to the FP series of high-power IGBT modules designed by Infineon Technologies. It utilizes silicon technology for reliable power switching applications. The module integrates multiple semiconductor chips into a single compact package for efficient power conversion.
Replacement Considerations
Consult official Infineon cross-reference documentation for verified substitutes. Ensure electrical parameters match or exceed original specifications. Verify pinout compatibility before implementation.
