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The FP25R12N2T7B80BPSA1 is a PIM IGBT module from Infineon Technologies, rated at 1200 V and 25 A. It belongs to the Trenchstop IGBT7 series and utilizes silicon technology. The module features a collector-emitter saturation voltage of 1.6 V and a gate-emitter leakage current of 100 nA. It operates within a temperature range of -40 °C to +175 °C. The device is packaged in a tray format with a factory pack quantity of 15 units.
Verify the specific suffix B80 against official Infineon documentation to confirm packing type and moisture protection status. Ensure compatibility with existing PCB layouts and thermal management solutions before procurement. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components.
Select this module for applications requiring 1200 V blocking capability and 25 A continuous current. Consider the 1.6 V saturation voltage for conduction loss calculations. Verify that the operating junction temperature remains within the specified -40 °C to +175 °C range for reliable performance in industrial environments.
This component is part of Infineon's EasyPIM family, designed for three-phase inverter configurations. It combines IGBTs and diodes into a single package to reduce footprint and parasitic inductance. The Trenchstop IGBT7 generation offers improved switching characteristics compared to previous iterations.
Direct substitutes include FP25R12W2T7BPSA1 and FP25R12N2T7BPSA1. Verify pinout compatibility and electrical parameters before substitution. Consult Infineon datasheets for detailed comparison of switching times and thermal resistance values.