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The FP25R12W2T4_B11 is a PressFIT IGBT module from the EasyPIM 2B series, integrating trench/fieldstop IGBT4 and Emitter Controlled 4 diodes. It features a 3-phase inverter configuration with a collector-emitter voltage of 1200 V and continuous DC collector current of 39 A at 25°C. The total power dissipation is 175 W, with a saturation voltage of 1.85 V at 25°C. Operating junction temperature ranges from -40°C to 150°C. The module includes an NTC thermistor (5 kΩ) for thermal monitoring and provides isolation test voltage of 2.5 kV.
Verify component authenticity by cross-referencing the manufacturer part number against official Infineon documentation. Confirm that the ordering suffix matches the specific technical variant required for the application. Ensure compliance with RoHS standards and check for any specific handling instructions related to the PressFIT installation process before procurement.
Select this module for applications requiring robust mechanical stability through PressFIT mounting. Verify that the system's thermal management can handle the specified junction-to-case thermal resistance. Ensure the gate drive circuitry supports the recommended ±15 V operating voltage and accounts for the input capacitance characteristics provided in the datasheet.
This component belongs to the Infineon EasyPIM 2B family, designed for compact power conversion solutions. It combines inverter and brake chopper stages into a single package. The T4 designation indicates the use of IGBT4 technology, which offers improved switching losses compared to previous generations while maintaining high blocking voltage capabilities.
Direct replacements within the same EasyPIM 2B form factor should be considered. Verify that alternative parts maintain compatible Pinout configurations and thermal resistance values. Check if newer technology nodes like IGBT7 offer sufficient performance improvements to justify redesigning the gate drive or cooling infrastructure.