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The FP35R12KT4B15BPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes. It features a 1200 V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 35 A at TC = 100°C. The maximum repetitive peak collector current reaches 70 A for 1 ms pulses. Total power dissipation is rated at 210 W at TC = 25°C. The module includes a built-in NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Operating junction temperature ranges from -40°C to 150°C, while the maximum junction temperature allows up to 175°C.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for specific ordering suffix variations that may affect packaging or material composition. Ensure storage conditions remain within the specified temperature range to maintain device integrity prior to assembly.
Select this module for three-phase inverter topologies requiring robust thermal performance and low conduction losses. Evaluate gate resistor values carefully, as recommended minimums are necessary when operating with Vge = 0V/+15V. Consider the 35 nH stray inductance for circuit layout optimization to minimize voltage overshoot during switching transitions.
This component belongs to the EconoPIM™2 series, designed for compact three-phase power conversion. It combines inverter legs, rectifier diodes, and a brake chopper into a single housing. The B15 suffix indicates specific terminal configuration or material variant compared to standard versions.
Direct substitutes include other FP35R12KT4 variants within the EconoPIM™2 family. Verify pin compatibility and thermal resistance specifications before substitution. Cross-reference datasheet electrical characteristics to ensure equivalent performance in the target application.
The maximum junction temperature for the rectifier section is 150°C, whereas the inverter and brake-chopper sections support up to 175°C.
The inverter IGBTs can withstand a short-circuit current of 130 A for up to 10 µs at Tvj = 150°C. The brake-chopper IGBTs withstand 55 A under similar conditions.
The module supports an isolation test voltage of 2.5 kV RMS at 50 Hz for one minute between terminals and heatsink.