SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Infineon FP35R12W2T4PB11BPSA1 is an EasyPIM module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 35 A at TH=80°C, and a repetitive peak collector current of 70 A. The typical VCEsat is 1.85 V at Tvj=25°C. Thermal resistance from junction to heatsink is 1.00 K/W per IGBT and 1.29 K/W per inverter diode. An integrated NTC thermistor provides a rated resistance of 5.00 kΩ at 25°C.
Verify the exact ordering suffix PB11BPSA1 against official documentation to confirm the inclusion of pre-applied thermal interface material and specific terminal configurations. Ensure compatibility with PressFIT assembly tools and verify that the baseplate operation temperature limits align with the system's cooling design requirements.
Select this component when a compact three-phase input rectifier topology is required alongside auxiliary inverter capabilities. The 1200 V rating supports high-voltage DC bus applications. Consider the 35 A nominal current limit and the specific thermal resistance values for heatsink sizing calculations under continuous operating conditions.
This part belongs to the EasyPIM family, which combines power semiconductors and gate drivers in a single package. The FP35R12W2T4 series utilizes Infineon's IGBT4 technology. The B11 suffix typically denotes specific internal variations or packaging details within the EasyPIM lineup, requiring datasheet confirmation for precise electrical matching.
Public confirmed substitute part numbers are not available in the provided source material. Verify pinout and thermal characteristics before considering any alternative modules from different manufacturers or other Infineon series.