FP50R06KE3BOSA1

Overview

The FP50R06KE3BOSA1 is an EconoPIM2 module integrating Trench/Fieldstop IGBT³ and EmCon3 diode technologies. It features a 600 V collector-emitter voltage (VCES) and a continuous DC collector current of 50 A at TC=80°C. The inverter IGBT exhibits a saturation voltage (VCEsat) ranging from 1.45 V to 1.90 V depending on junction temperature. The rectifier section includes a 1600 V diode with a maximum RMS forward current of 70 A per chip. Thermal resistance from junction to case is 0.80 K/W for the IGBT and 1.20 K/W for the inverter diode. The module weighs 180 g and operates within a junction temperature range of -40°C to 175°C.

Feature Summary

• Integrates Trench/Fieldstop IGBT³ technology with EmCon3 diodes for optimized switching performance.
• Combines three-phase inverter, brake-chopper, and rectifier functions into a single compact package.
• Includes an integrated NTC thermistor for precise thermal monitoring.
• Features copper baseplate construction with internal Al2O3 basic insulation.

Applications

• Three-phase motor drives
• Induction heating systems
• Uninterruptible power supplies (UPS)
• Solar inverters

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet revision history and part number suffixes. Confirm that the specific ordering code matches the required electrical ratings and packaging specifications before finalizing orders. Ensure compliance with RoHS directives and REACH regulations as stated in the technical documentation.

Selection Notes

Select this module for applications requiring combined inverter, chopper, and rectifier functionality in a space-constrained design. Evaluate thermal management requirements based on the specified junction-to-case thermal resistances. Ensure gate drive voltages remain within the ±20 V peak limit to prevent damage to the gate-emitter interface during operation.

Part Context

This component belongs to Infineon's EconoPIM series, designed for high-power density applications. It utilizes the Trenchstop IGBT3 generation, which offers improved switching characteristics compared to previous technologies. The module integrates multiple semiconductor chips to reduce system complexity and stray inductance in power circuits.

Replacement Considerations

Direct replacements must match the 600 V rating, 50 A current capacity, and EconoPIM2 footprint. Verify compatibility of thermal resistance values and pin configurations. Consider newer generations like IGBT7 modules if higher efficiency or switching frequency is required, ensuring mechanical and electrical parameters align.

FAQ

What is the maximum repetitive peak reverse voltage for the rectifier diode?

The rectifier diode has a maximum repetitive peak reverse voltage (VRRM) of 1600 V.

What is the rated resistance of the integrated NTC thermistor?

The NTC thermistor has a rated resistance (R25) of 5.00 kΩ at 25°C.

What is the typical turn-on delay time for the inverter IGBT?

The typical turn-on delay time (td on) is 0.10 µs at a junction temperature of 25°C, measured under standard test conditions.