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The FP50R06KE3BPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT³ and EmCon3 diode technologies. It features a three-phase input rectifier configuration with inverter and brake-chopper stages. Maximum rated values include a collector-emitter voltage of 600 V, continuous DC collector current of 50 A at TC=80°C, and repetitive peak collector current of 100 A. Total power dissipation reaches 190 W at TC=25°C. The gate-emitter peak voltage is ±20 V. Diode specifications provide a repetitive peak reverse voltage of 600 V for the inverter stage and 1600 V for the rectifier stage. Continuous forward current is 50 A. Thermal resistance from junction to case is 0.80 K/W per IGBT and 1.20 K/W per diode.
Verify component authenticity by cross-referencing the manufacturer's part number against official datasheets. Confirm that the specific ordering suffix matches the required technical characteristics. Ensure compliance with RoHS directives and verify insulation test voltages meet application safety standards before integration into final designs.
Select this module for applications requiring combined rectification and inversion capabilities. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Ensure the operating temperature range aligns with the maximum junction temperature limits defined for both the inverter and rectifier sections.
This component belongs to Infineon's EconoPIM™2 series, designed for high-density power conversion. It utilizes advanced trench fieldstop IGBT technology to optimize switching losses and conduction characteristics. The module integrates multiple semiconductor functions into a single housing to reduce system complexity and parasitic inductance.
Consult official replacement lists for direct substitutes. Verify pin compatibility and electrical parameters when considering alternative modules from the same product family or different manufacturers.