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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 280W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：NPT
- Configuration：Single
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：280 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：3.5 nF @ 25 V
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Overview
The FP50R12KE3BOSA1 is a single IGBT module with an integrated anti-parallel diode and NTC thermistor. It features a collector-emitter voltage of 1200 V, continuous DC collector current of 75 A at 25°C, and total power dissipation of 280 W. The saturation voltage is 2.15 V max at 50 A and 15 V gate drive. Switching losses include turn-on energy of 6.6 mJ and turn-off energy of 5.8 mJ at 125°C. Thermal resistance from junction to case is 0.45 K/W for the IGBT and 0.75 K/W for the diode.
Feature Summary
- Integrated NTC thermistor for reliable thermal monitoring
- Short-circuit capability up to 200 A for 10 microseconds
- High isolation test voltage of 2.5 kV RMS
Applications
- Inverter circuits
- Brake chopper applications
- Rectifier circuits
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm RoHS compliance and revision status against official datasheets before integration. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during installation and storage.
Selection Notes
Evaluate thermal management requirements based on the specified junction-to-case resistance values. Verify that the operating temperature range of -40°C to 125°C aligns with system constraints. Consider gate resistor values to optimize switching speed and minimize electromagnetic interference in the target circuit design.
Part Context
This component belongs to the FP series of IGBT modules manufactured by Infineon Technologies. It utilizes NPT (Non-Punch Through) technology for robust performance. The module is designed for high-power density applications requiring efficient thermal dissipation and reliable switching characteristics in industrial power electronics systems.
Replacement Considerations
FP50R12KE3
FAQ
What is the maximum short-circuit current rating?
The module supports a short-circuit current of 200 A for a duration of up to 10 microseconds.
Does the module include thermal monitoring?
Yes, it includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C.
What is the isolation test voltage?
The isolation test voltage is 2.5 kV RMS at 50 Hz for one minute.
