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Product Detailed Parameters
- Description：IGBT MOD 1200V 75A 280W
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：Three Phase Inverter
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 50A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：75 A
- Power - Max：280 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：3.5 nF @ 25 V
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Overview
The FP50R12KT3BOSA1 is a single NPT IGBT module manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The device has a maximum power dissipation of 280 W and operates within a junction temperature range of -40°C to 125°C. The saturation voltage is 2.15 V max at 15 V gate drive and 50 A collector current. Input capacitance is 3.5 nF at 25 V. It utilizes a base-mounted module package.
Feature Summary
- NPT technology for robust switching performance
- Integrated thermal monitoring capability via suffix designation
- Standard gate input configuration
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix BOSA1 against official Infineon documentation to confirm integrated component inclusion, as suffixes often denote internal variations like NTC thermistors or pin configurations. Ensure the ordering part number matches the exact datasheet revision required for the design. Cross-reference with authorized distributors to confirm current availability status and lead times.
Selection Notes
Select this module for applications requiring 1200 V blocking capability and up to 75 A continuous current. Consider the 280 W power dissipation limit when designing the thermal management system. Verify that the screw-mount installation method fits the mechanical constraints of the target enclosure. Compare electrical characteristics with alternative TRENCHSTOP™ IGBT generations if lower switching losses are required.
Part Context
This component belongs to the FP50R12 series of IGBT modules from Infineon. It is part of the broader portfolio of power semiconductor devices designed for high-efficiency energy conversion. The module integrates silicon chips into a standardized housing suitable for industrial power electronics applications.
Replacement Considerations
Consult Infineon's replacement guide for direct equivalents. Alternative models may include variants with different thermal resistance or packaging styles. Ensure any substitute maintains compatible pinout and electrical ratings.
