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Product Detailed Parameters
- Description：MOD IGBT LOW PWR ECONO2-4
- Series：EconoPIM™ 2
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP50R12KT4PB11BPSA1 is a Power Integrated Module (PIM) manufactured by Infineon Technologies, designed for three-phase input rectifier applications. It integrates IGBTs and diodes within an EconoPIM2 package structure. The module features a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 50 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.85 V and a gate-emitter leakage current of 100 nA. The device supports a power dissipation capacity of 280 W and operates within a temperature range from -40°C to +150°C.
Feature Summary
- Integrates three-phase input rectifier functionality with IGBT technology
- Utilizes low stray inductance module design for optimized performance
- Incorporates copper baseplate for efficient thermal management
Applications
- Three-phase AC/DC conversion systems
- Industrial motor drive rectifiers
- Power supply units requiring integrated rectification
Procurement Notes
Verify the exact part number against official Infineon documentation, as standard listings typically reference FP50R12KT4B11BPSA1 or similar variants within the FPXR12K4G series. Confirm RoHS compliance status and specific suffix designations directly with the manufacturer or authorized distributors to ensure component authenticity and correct technical specifications.
Selection Notes
Select this module for applications requiring a compact solution for three-phase rectification with high power density. Ensure the system design accommodates the 1.85 V saturation voltage drop and 280 W power dissipation limits. Verify that the operating environment remains within the specified -40°C to +150°C junction temperature range for reliable operation.
Part Context
This component belongs to the Infineon FPXR12K4G series of IGBT modules. It utilizes TRENCHSTOP IGBT4 technology combined with EmCon4 diodes. The module is housed in the AG-ECONO2-4 package, which provides screw mounting capabilities and is designed for high reliability in industrial power electronics applications.
Replacement Considerations
Direct substitutes may include other Infineon PIM modules within the same voltage and current ratings, such as the FP50R12KT4B11BPSA1. Cross-referencing pinouts and thermal characteristics with the original datasheet is essential before implementation.
