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The FP50R12N2T4B16BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the EconoPIM series. It features a three-phase inverter configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 50 A at 25°C. The device has a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 280 W. It operates within a temperature range of -40°C to +150°C and utilizes screw mount installation in an Econo 3 package.
Verify the specific suffix B16 against official Infineon documentation to confirm exact ordering and revision details. Ensure compatibility with existing gate drive circuits and thermal interface materials. Cross-reference the datasheet for precise mounting torque specifications and electrical isolation requirements before integration into the final design.
Select this component for applications requiring a 1200V, 50A three-phase inverter solution. Consider the 280W power dissipation and -40°C to +150°C operating range for environmental suitability. Evaluate the Econo 3 package dimensions for mechanical fit within the target enclosure and heat sink assembly constraints.
This module is part of Infineon's EconoPIM family, designed for high-power density applications. It combines multiple IGBTs and diodes into a single unit to reduce parasitic inductances and simplify system layout. The TRENCHSTOP technology provides a balance between low conduction losses and fast switching speeds.
FP50R12KT4GBOSA1 is listed as an alias or related part number. Verify functional equivalence and pinout compatibility before substitution. Other variants in the FPXR12K4G series may offer similar ratings but require detailed parameter comparison.