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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP50R12N2T4B16BPSA1 is a silicon IGBT module from Infineon Technologies, rated at 1200 V and 50 A. It utilizes TRENCHSTOP™ IGBT7 technology within the EconoPIM2 package configuration. The device features a collector-emitter saturation voltage of 1.85 V and supports a maximum junction temperature of 175 °C. Designed for three-phase inverter applications, it integrates an NTC thermistor for thermal monitoring. The component operates within a temperature range of -40 °C to +175 °C and employs screw mount installation.
Verify the specific suffix B16 against official Infineon documentation to confirm pinout compatibility and thermal characteristics. Ensure that the sourcing channel provides valid RoHS compliance certificates. Cross-reference the datasheet revision date to guarantee alignment with current manufacturing specifications before finalizing procurement orders.
Select this module for applications requiring high power density and efficient thermal management. The 1200 V rating suits medium-voltage industrial systems. Consider the 175 °C junction temperature capability for robust operation in demanding environments. Verify that the EconoPIM2 footprint matches the target PCB design constraints.
This component belongs to the Infineon TRENCHSTOP™ IGBT7 family, representing advanced silicon technology. It is part of the EconoPIM series, designed for modular power conversion. The FP50R12N2T4B16BPSA1 specifically targets three-phase rectifier and inverter topologies, offering a balance of low conduction losses and reliable switching behavior.
Consult official Infineon substitution guides for direct replacements. Compatible alternatives may include other FP50R12 variants within the IGBT7 family, provided they match the EconoPIM2 package and electrical ratings.