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The FP50R12N2T4PB81BPSA2 is a silicon IGBT module manufactured by Infineon Technologies, designed for three-phase inverter configurations. It features a maximum collector-emitter voltage of 1.2 kV and a continuous collector current rating of 50 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.5 V and a gate-emitter leakage current of 100 nA. Operating within a temperature range from -40°C to +175°C, this component utilizes T7 technology and is supplied in tray packaging.
Verify the specific suffix BPSA2 against official Infineon documentation to confirm pinout compatibility and marking details. Ensure that the required factory lead time aligns with production schedules, as availability may vary. Cross-reference the datasheet version to validate electrical characteristics before finalizing procurement orders.
Select this module when a 1200 V rating and 50 A continuous current capacity are required for three-phase inverter topologies. Consider the 1.5 V saturation voltage for efficiency calculations in medium-power applications. Verify thermal management requirements given the 175°C junction temperature limit and ensure the PCB layout supports the specific package dimensions.
This component belongs to Infineon's IGBT Silicon Modules series, specifically utilizing T7 technology. It is part of the broader family of power modules designed for industrial applications requiring robust switching capabilities. The FP50R12N2T4PB81BPSA2 shares architectural similarities with other PIM (Power Integrated Module) variants but is distinct in its specific electrical ratings and configuration.
Official substitute part numbers include FP50R12N2T7BPSA2 and FP50R12N2T7BPSA1. Verify functional equivalence and pin compatibility before substitution. Alternative models such as FP50R12KT4BPSA1 exist but feature different saturation voltages and should be evaluated carefully.