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The FP75R07N2E4_B11 is an EconoPIM™2 IGBT module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a 650V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 75A at TC=70°C, with a repetitive peak current of 150A. The typical VCEsat is 1.55V at Tvj=25°C. It includes an integrated NTC thermistor for thermal monitoring and utilizes an isolated copper baseplate. Maximum junction temperature is 175°C for the inverter and brake-chopper sections.
Verify the exact ordering suffix against official Infineon documentation to confirm specific manufacturing revisions or regional variants. Confirm compliance with RoHS and REACH regulations prior to integration. Ensure that the PressFIT mounting process strictly follows the manufacturer's application notes to maintain electrical integrity and thermal performance.
Select this module for applications requiring 650V blocking capability and up to 75A continuous current. Consider the positive temperature coefficient of VCEsat for parallel operation stability. Evaluate the thermal resistance values (RthJC) against the system heatsink design to ensure junction temperatures remain within the 175°C maximum limit during switching operations.
This component belongs to the EconoPIM™2 series from Infineon Technologies, utilizing the Trenchstop IGBT4 technology platform. It is designed as a compact power module for industrial power conversion. The 'B11' suffix typically denotes specific packaging or reel configuration details defined by the manufacturer.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Infineon technical support for qualified replacements or cross-reference with the latest product selection guide for updated modules in the EconoPIM™2 family.