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The FP75R07N2E4BPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 3 diodes with an NTC sensor. It features a collector-emitter voltage (VCES) of 650 V, continuous DC collector current (IC nom) of 75 A at TC=70°C, and repetitive peak collector current (ICRM) of 150 A. The typical saturation voltage (VCEsat) is 1.55 V at Tvj=25°C. The integrated rectifier diode supports a repetitive peak reverse voltage (VRRM) of 1600 V. Thermal resistance from junction to case (RthJC) is 0.600 K/W per IGBT and 0.950 K/W per inverter diode.
Verify the exact ordering suffix against official Infineon documentation before purchase. Confirm that the specific variant matches the required pinout and internal configuration. Ensure compliance with RoHS directives and check for any specific handling requirements during storage and assembly.
Select this component for applications requiring high blocking voltage and moderate current levels. Consider the thermal resistance values when designing heatsinking solutions. Evaluate the switching losses at the intended operating frequency and gate resistance to ensure efficiency targets are met within the specified temperature range.
This module belongs to the EconoPIM™2 series, designed for compact power conversion systems. It utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 3 diodes. The packaging provides a standardized footprint suitable for industrial power electronics, facilitating integration into motor drive and rectifier topologies.
Public confirmed substitute part numbers: None available.