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Product Detailed Parameters
- Description：FP75R12 - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP75R12KT4B16BOSA1 is an EconoPIM™3 module featuring Trenchstop IGBT4 and Emitter Controlled Diode 4 technologies. It integrates a three-phase inverter, rectifier, and brake-chopper topology within a standard housing with a copper baseplate. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V and a continuous DC collector current (IC nom) of 75 A at TC = 95°C. The typical saturation voltage (VCEsat) is 1.85 V at Tvj = 25°C. The module incorporates an integrated NTC thermistor for temperature monitoring.
Feature Summary
- Integrates fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes for low switching losses.
- Includes an integrated negative temperature coefficient (NTC) thermistor for thermal management.
- Features high power and thermal cycling capability with solder contact technology.
- Provides a compact standard housing design suitable for industrial applications.
Applications
- Servo drives
- Motor drives
- Medical applications
- Auxiliary inverters
Procurement Notes
Verify the specific ordering suffix B16 against official Infineon documentation to confirm exact manufacturing details or regional specifications. Ensure compatibility with M5 mounting screws as specified in the application notes. Confirm RoHS compliance status through the manufacturer's certificate before integration into final assemblies.
Selection Notes
Select this module for designs requiring a combined three-phase inverter, rectifier, and brake-chopper solution. Evaluate thermal resistance values (RthJC) against the expected junction temperature limits of 150°C. Consider the internal gate resistance and stray inductance when designing the gate drive circuitry and PCB layout for optimal switching performance.
Part Context
This component belongs to the Infineon EconoPIM™3 series, which combines multiple power stages in a single package. It utilizes the fourth generation Trenchstop IGBT technology to balance conduction and switching losses. The module is designed for industrial environments, offering robust insulation and high reliability under varying thermal conditions.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material. Consult Infineon technical support for cross-referencing alternatives based on specific electrical and mechanical requirements.
