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Product Detailed Parameters
- Description：IGBT MODULE LOW POWER ECONO
- Series：EconoPIM™ 2
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP75R12N2T4B11BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the EconoPIM™ 2 series. It features a three-phase input rectifier configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The device utilizes Trenchstop™ technology for optimized switching performance. It is housed in a tray package with a factory pack quantity of 10 units. The module operates within a temperature range of -40°C to +150°C and complies with RoHS standards.
Feature Summary
- Integrates three-phase input rectifier topology within a single compact module.
- Utilizes Infineon Trenchstop™ technology for enhanced efficiency and thermal stability.
- Features EconoPIM™ 2 packaging designed for robust mechanical integration.
Applications
- Three-phase AC/DC converter circuits
- Industrial power supply systems
- Motor drive front-end rectification
Procurement Notes
Verify the specific suffix B11 against official datasheets to confirm pinout and electrical characteristics match the design requirements. Check manufacturer status as distribution channels may list discontinued or end-of-life inventory. Confirm RoHS compliance documentation is available for regulatory adherence. Ensure handling procedures account for the tray packaging format during assembly.
Selection Notes
Select this component when a 1200 V rating and 75 A current capacity are required for three-phase rectification applications. Compare saturation voltage and switching losses against alternative Trenchstop generations if lower conduction losses are critical. Evaluate the EconoPIM™ 2 footprint compatibility with existing PCB layouts and cooling solutions before finalizing the design choice.
Part Context
This part belongs to the broader FP75R12 family of Infineon IGBT modules. Variants such as FP75R12N2T4PBPSA1 differ primarily in internal diode configurations or packaging revisions. The N2 designation typically indicates specific trench generation characteristics within the 1200 V class. Cross-referencing the full datasheet is necessary to distinguish between similar model numbers in the same current and voltage bracket.
Replacement Considerations
Direct substitutes include other Infineon EconoPIM™ 2 modules with identical 1200 V and 75 A ratings. Verify pin-to-pin compatibility with variants like FP75R12N2T4PBPSA1 if the rectifier configuration matches. Alternative technologies require re-evaluation of gate drive requirements and thermal management strategies due to differing switching speeds.
