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The FP75R12N2T4B86BPSA1 is a Power Integrated Module (PIM) IGBT module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 75 A at 25°C. The device utilizes Trenchstop™ IGBT4 technology for efficient power switching. Designed for three-phase inverter configurations, it integrates rectifier and inverter functions within a compact package suitable for industrial power conversion applications requiring high reliability and thermal performance.
Verify the specific suffix B86 against official datasheets to confirm pinout compatibility and thermal interface specifications. Ensure gate drive requirements align with the Trenchstop IGBT4 family characteristics. Confirm that the application environment supports the maximum operating temperature limits defined in the component documentation before finalizing procurement.
Select this module when a combined rectifier and inverter solution is required for three-phase systems. The 1200 V rating provides robustness against voltage transients common in industrial networks. Consider the 75 A current capacity relative to the expected load profile and cooling conditions to ensure operation within safe thermal boundaries without exceeding junction temperature limits.
This component belongs to Infineon's EconoPIM series, which combines multiple power semiconductor devices into a single module. The Trenchstop IGBT4 generation offers improved efficiency compared to previous iterations. As a PIM, it reduces board space and simplifies assembly by integrating both rectification and inversion stages, making it distinct from standard six-pack or half-bridge modules.
Consult official replacement guides for direct equivalents. Cross-reference electrical parameters such as Vceo, Ic, and saturation voltage when evaluating alternative PIMs. Verify mechanical footprint and terminal configuration compatibility if substituting with modules from other manufacturers or different Infineon series.