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Product Detailed Parameters
- Description：IGBT MODULE LOW POWER ECONO
- Series：EconoPIM™ 2
- Mfr：Infineon Technologies
- Package：Bulk,Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP75R12N2T4BOSA1 is a silicon IGBT module from Infineon Technologies, belonging to the FPXR12N series. It features a three-phase inverter configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 75 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.85 V and a power dissipation rating of 385 W. Operating within a junction temperature range of -40°C to +150°C, it utilizes screw mount installation. The module incorporates Trenchstop technology for optimized switching performance.
Feature Summary
- Integrates Trenchstop IGBT technology for enhanced efficiency
- Designed for three-phase inverter circuit applications
- Features robust thermal management capabilities up to 150°C
Applications
- Three-phase motor drive systems
- Industrial power conversion equipment
- General purpose inverter architectures
Procurement Notes
Verify the specific suffix BOSA1 against official Infineon documentation to confirm exact manufacturing lot attributes and compliance status. Confirm package integrity upon receipt as modules are sensitive to mechanical stress. Ensure gate driver compatibility with the specified voltage thresholds before integration into the final assembly.
Selection Notes
Select this component when a 1.2 kV rating and 75 A current capacity are required for three-phase topologies. Compare the 1.85 V saturation voltage against system loss requirements. Verify that the EconoPIM form factor fits the available PCB or busbar layout constraints compared to alternative packages in the same voltage class.
Part Context
This part belongs to the FPXR12N family, which utilizes Trenchstop technology. It shares the 1.2 kV / 75 A electrical profile with other variants like the FP75R12KT4 series but differs in packaging and specific internal cell architecture. The BOSA1 suffix denotes a specific tape-and-reel or tray variant depending on the generation.
Replacement Considerations
Direct substitutes include FP75R12KT4 and FP75R12KT4_B15. These alternatives share identical electrical ratings and pinout configurations. Verify thermal resistance values and gate charge specifications to ensure equivalent performance in the target application.
