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The FP75R12N3T4PB81BPSA1 is a silicon IGBT module from Infineon Technologies, belonging to the EconoPIM™ 2 series. It features a three-phase inverter configuration with a maximum collector-emitter voltage of 1200 V and a continuous collector current of 75 A at 25°C. The typical collector-emitter saturation voltage is 1.55 V, while the anti-parallel diode forward voltage is 1.7 V. Operating within a temperature range of -40°C to +175°C, it utilizes screw mount installation in an EconoPIM™ 2 package.
Verify the specific suffix against official Infineon documentation to confirm terminal type and packaging details. Confirm RoHS compliance status and check for obsolescence notices before procurement. Ensure compatibility with existing gate driver requirements and thermal management solutions.
Select this component for applications requiring high reliability and compact design in medium-power industrial environments. Consider the thermal resistance characteristics and the benefits of press-fit mounting over traditional screw connections for vibration resistance.
This part belongs to the EconoPIM™ 2 family, designed for three-phase rectifier and inverter applications. It combines IGBTs and diodes in a single module to reduce footprint and improve system efficiency compared to discrete solutions.
Direct replacements include FP75R12N3T4BPSA1 or FP75R12N3T7B81BPSA1, provided pinout and electrical parameters match. Verify that alternative modules support the required press-fit installation and thermal interface specifications.