FPN560

Single Bipolar Transistors Overview

The FPN560 is an NPN low saturation bipolar junction transistor designed for high current gain and low saturation voltage applications. It supports continuous collector currents up to 3.0 A with a collector-emitter breakdown voltage of 60 V and a collector-base breakdown voltage of 80 V. The device features a minimum DC current gain (hFE) of 250 at IC = 1.0 A and VCE = 2.0 V, ensuring efficient switching performance. Total device dissipation is rated at 1.0 W, with thermal resistance values of 50 °C/W junction-to-case and 125 °C/W junction-to-ambient. Operating and storage temperatures range from -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• Optimized for high current gain and low saturation voltage in power switching applications
• Capable of handling continuous collector currents up to 3.0 A
• Designed with robust thermal characteristics for reliable operation under high load conditions

Single Bipolar Transistors Applications

• High-speed switching circuits
• Power amplifier stages
• Driver circuits requiring high current gain

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Fairchild or onsemi documentation to confirm exact electrical tolerances and packaging specifications. Ensure compliance with RoHS directives if required by your application standards. Confirm availability through authorized distributors as product status may change. Always refer to the latest datasheet for absolute maximum ratings and thermal management guidelines before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that demand high DC current gain combined with low collector-emitter saturation voltage. It is suitable for applications where minimizing power loss during the on-state is critical. Consider the TO-226 package constraints and thermal resistance values when planning heat dissipation strategies. Evaluate the transition frequency and capacitance parameters if high-frequency signal integrity is a primary design requirement.

Single Bipolar Transistors Part Context

This NPN transistor belongs to the family of low saturation devices originally manufactured by Fairchild Semiconductor, which has since undergone corporate restructuring involving onsemi. The FPN560 shares functional similarities with the FPN560A, primarily distinguished by specific gain binning or manufacturing lot variations rather than fundamental architectural differences. It serves as a discrete solution for medium-power switching tasks in industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

The FPN560A is a documented variant within the same series. Verify pinout compatibility and ensure replacement parts meet the original hFE and VCE(sat) requirements specified in the design.

Single Bipolar Transistors FAQ

What is the maximum collector current rating for the FPN560?

The FPN560 supports a continuous collector current of 3.0 A.

How does the FPN560 differ from the FPN560A?

Both are NPN low saturation transistors from the same series; differences typically lie in specific gain binning or manufacturing details rather than core functionality.

What is the typical DC current gain at 1.0 A collector current?

The minimum DC current gain (hFE) is specified as 250 when IC = 1.0 A and VCE = 2.0 V.