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FQA15N70 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is N-CHANNEL POWER MOSFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQA15N70
- Description：N-CHANNEL POWER MOSFET
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：700 V
- Current - Continuous Drain (Id) @ 25°C：15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：560mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3630 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
Single FETs, MOSFETs datasheet and documents for FQA15N70
Single FETs, MOSFETs Overview
The FQA15N70 is a 700 V N-Channel Power MOSFET manufactured by Fairchild Semiconductor. It features a TO-3P (SC-65) through-hole package designed for efficient power switching applications. The device supports a continuous drain current of 15 A at case temperature and offers a maximum power dissipation of 300 W under thermal conditions. Key electrical characteristics include a breakdown voltage of 700 V, fast recovery time, and low noise emission capabilities.
Single FETs, MOSFETs Feature Summary
- Efficient power switching with fast recovery time
- Low noise emission design
- High voltage capability suitable for robust power circuits
Single FETs, MOSFETs Applications
- Power switching circuits
- Industrial motor control systems
- High-voltage DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the manufacturer part number FQA15N70 against official Fairchild Semiconductor documentation to ensure authenticity. Confirm the package type matches the required TO-3P or SC-65 specification. Check datasheet revisions for any updates to electrical parameters or thermal resistance values before integration into final designs.
Single FETs, MOSFETs Selection Notes
Select this component when a high-voltage N-Channel MOSFET with through-hole mounting is required. Ensure the application operates within the 700 V breakdown limit and 15 A current rating constraints. Consider thermal management requirements given the 300 W power dissipation rating at case temperature.
Single FETs, MOSFETs Part Context
This component belongs to the Fairchild Semiconductor discrete transistor family, specifically categorized as an N-Channel Power MOSFET. It is engineered for high-voltage applications requiring reliable switching performance in industrial and commercial power electronics environments.
Single FETs, MOSFETs Replacement Considerations
Consult official Fairchild Semiconductor substitution guides for verified equivalents. Do not assume compatibility based solely on voltage and current ratings without verifying gate charge, threshold voltage, and thermal characteristics.
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