FQA34N20L

Single FETs, MOSFETs Overview

The Fairchild Semiconductor FQA34N20L is an N-channel enhancement mode power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 200 V and a continuous drain current of 34 A at case temperature. The device utilizes planar stripe DMOS technology to minimize on-state resistance, which is specified as a maximum of 65 mΩ at a gate-source voltage of 10 V. Packaged in a TO-220AB through-hole configuration with three pins, it supports a maximum power dissipation of 180 W. The component operates within a junction temperature range of -55 °C to +150 °C and includes a built-in body diode.

Single FETs, MOSFETs Feature Summary

• Utilizes advanced planar stripe DMOS technology to achieve low on-state resistance and superior switching performance.
• Engineered to withstand high energy pulses in avalanche and commutation modes.
• Features low gate charge and fast switching characteristics for improved efficiency.
• Includes a built-in body diode for use in synchronous rectification or freewheeling applications.

Single FETs, MOSFETs Applications

• High efficiency switching DC/DC converters
• Switch mode power supplies (SMPS)
• Motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet revision and manufacturer documentation to confirm exact electrical parameters, particularly RDS(on) limits and thermal characteristics. Ensure the procurement source provides original Fairchild Semiconductor packaging and labeling. Cross-reference the part number against official distribution channels to avoid counterfeit components. Confirm compliance with relevant environmental standards required for the target application.

Single FETs, MOSFETs Selection Notes

Select this component when a 200 V rating and approximately 34 A continuous current capability are required in a TO-220 package. Consider the 65 mΩ maximum on-resistance for conduction loss calculations. Evaluate the thermal management requirements given the 180 W power dissipation rating. Compare gate charge specifications against drive capabilities if high-frequency switching is intended.

Single FETs, MOSFETs Part Context

This component belongs to the Fairchild Semiconductor N-channel MOSFET family utilizing DMOS technology. It shares design principles with similar parts like the FQP34N20L and FQU7N20L, focusing on low on-resistance and robust avalanche performance. These devices are commonly used in power electronics requiring reliable switching at medium voltages.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes such as the FQP34N20L from the same manufacturer. Verify pinout compatibility and ensure that replacement parts meet or exceed the 200 V breakdown voltage and 34 A current ratings. Confirm that the alternative device's thermal resistance and package dimensions fit the existing board layout.