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FQA6N90 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 900V 6.4A TO3P. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQA6N90
- Description：MOSFET N-CH 900V 6.4A TO3P
- Series：QFET®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：900 V
- Current - Continuous Drain (Id) @ 25°C：6.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：52 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：1880 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：198W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
Single FETs, MOSFETs datasheet and documents for FQA6N90
Single FETs, MOSFETs Overview
The FQA6N90 is a discontinued N-channel enhancement mode power MOSFET manufactured by onsemi. It utilizes Q-FET technology and is housed in a TO-3PN-3 through-hole package. The device features a drain-source breakdown voltage of 900 V and a continuous drain current of 6 A. Key electrical parameters include a maximum on-resistance of 4.2 Ohms at Vgs=10V, a gate-source voltage range of ±30 V, and a power dissipation rating of 280 W. Operating temperatures range from -55°C to +150°C.
Single FETs, MOSFETs Feature Summary
- High-voltage capability with 900 V drain-source breakdown
- Enhanced switching performance via Q-FET planar stripe technology
- Robust avalanche energy strength for reliable operation
- Through-hole mounting for high-power thermal management
Single FETs, MOSFETs Applications
- Switched mode power supplies (SMPS)
- Active power factor correction (PFC) circuits
- Electronic lamp ballasts
Single FETs, MOSFETs Procurement Notes
Verify component status as the FQA6N90 is listed as obsolete or discontinued by the manufacturer. Sourcing may be limited to surplus distributors or secondary markets. Confirm RoHS compliance details and check for valid datasheets before integration into new designs due to potential supply chain constraints.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring high-voltage isolation and moderate current handling in through-hole configurations. Compare against newer Q-FET variants for improved efficiency if available. Ensure thermal design accommodates the specified power dissipation limits under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's Q-FET series of high-voltage N-channel MOSFETs. These devices are designed for general-purpose power switching applications where high voltage blocking capability is required. The TO-3PN package provides mechanical robustness suitable for industrial environments.
Single FETs, MOSFETs Replacement Considerations
Consider equivalent parts such as the FQA9N90C or FQA11N90C for higher current ratings within the same package family. Verify pinout compatibility and thermal characteristics when substituting.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
