FQD16N15TM

Single FETs, MOSFETs Overview

The FQD16N15TM is a surface-mount N-channel power MOSFET manufactured by Fairchild Semiconductor, now part of ON Semiconductor. It utilizes proprietary QFET® planar stripe and DMOS technology to achieve low on-resistance and high avalanche energy strength. The device features a drain-source voltage (V_DSS) of 150 V and a continuous drain current (I_D) of 11.8 A at case temperature (Tc). It is housed in a TO-252 (DPAK) package with thermal dissipation ratings of 2.5 W at ambient temperature (Ta) and 55 W at case temperature (Tc).

Single FETs, MOSFETs Feature Summary

• Utilizes QFET® planar stripe and DMOS technology for enhanced performance.
• Provides high avalanche energy strength with 100% avalanche testing.
• Designed for low switching losses through optimized gate charge characteristics.

Single FETs, MOSFETs Applications

• Switching mode power supplies
• Audio amplifiers
• DC motor control
• Variable power supplies

Single FETs, MOSFETs Procurement Notes

Verify the exact part number against official documentation, as Fairchild product identifiers may have been updated following its acquisition by ON Semiconductor. Ensure the ordering suffix matches the required packaging configuration, such as Tape & Reel, and confirm that the component meets all relevant RoHS compliance standards before integration into production systems.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust N-channel switching capabilities within a DPAK footprint. Consider the 150 V rating and 11.8 A current capacity relative to the specific thermal management constraints of the target design. Evaluate the trade-off between the TO-252 package's thermal resistance and the system's cooling requirements to ensure reliable operation under load.

Single FETs, MOSFETs Part Context

This device belongs to the QFET series of power MOSFETs from Fairchild Semiconductor. The series is characterized by advanced manufacturing techniques aimed at optimizing power efficiency. The FQD16N15TM specifically targets mid-power applications where space-saving surface mount packages are preferred over through-hole alternatives, offering a balance of electrical performance and thermal handling.

Single FETs, MOSFETs Replacement Considerations

Check for equivalent parts with matching 150 V, N-channel specifications in TO-252 packages. Verify that any substitute maintains comparable R_DS(on), gate charge, and avalanche energy ratings to ensure circuit compatibility without redesign.

Single FETs, MOSFETs FAQ

What technology is used to manufacture the FQD16N15TM?

It is manufactured using Fairchild Semiconductor's proprietary QFET® planar stripe and DMOS technology.

Is the FQD16N15TM tested for avalanche capability?

Yes, the device undergoes 100% avalanche testing to ensure good avalanche energy strength.