FQD2N60TF

$0.57

Description：MOSFET N-CH 600V 2A DPAK
Series：QFET®
Mfr：Fairchild Semiconductor
Package：Bulk

SKU:a4d3de93157a Category: Single FETs, MOSFETs Brand: Fairchild Semiconductor

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Product introduction

FQD2N60TF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 600V 2A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQD2N60TF

Description：MOSFET N-CH 600V 2A DPAK
Series：QFET®
Mfr：Fairchild Semiconductor
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：11 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta), 45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252 (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for FQD2N60TF

FQD2N60TF

Single FETs, MOSFETs Overview

The FQD2N60TF is an N-channel enhancement mode power MOSFET from Fairchild Semiconductor's QFET series, housed in a DPAK (TO-252) surface-mount package. It features a drain-source voltage of 600 V and a continuous drain current of 1.9 A at 25°C. The device exhibits a maximum on-state resistance of 4.7 Ω at VGS = 10 V and a typical gate charge of 8.5 nC at 10 V. It supports a maximum power dissipation of 44 W with an operating temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Utilizes proprietary planar stripe DMOS technology for minimized on-state resistance and superior switching performance.
Engineered to withstand high energy pulses in avalanche and commutation modes.
Features low gate charge and low reverse transfer capacitance for fast switching capabilities.

Single FETs, MOSFETs Applications

High efficiency switch mode power supplies
Active power factor correction circuits
Electronic lamp ballasts

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'TF' against official Fairchild documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the standard FQD2N60CTM electrical parameters if used as a direct replacement. Confirm RoHS compliance status through the manufacturer's latest datasheet revision.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust avalanche energy handling and efficient switching at 600 V. The DPAK package suits space-constrained designs needing moderate current capacity. Evaluate thermal management requirements based on the 44 W dissipation rating and junction-to-ambient thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Part Context

This part belongs to the QFET family of N-channel MOSFETs designed for general-purpose power switching. It shares architectural similarities with the FQD3N60 and FQD6N60C but offers lower current ratings optimized for cost-effective SMPS solutions. The device represents Fairchild's planar DMOS technology advancements prior to SuperFET integration.