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FQI17N08TU is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Fairchild Semiconductor. Its product description is MOSFET N-CH 80V 16.5A I2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQI17N08TU
- Description：MOSFET N-CH 80V 16.5A I2PAK
- Series：QFET®
- Mfr：Fairchild Semiconductor
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：80 V
- Current - Continuous Drain (Id) @ 25°C：16.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：115mOhm @ 8.25A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：3.13W (Ta), 65W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-262 (I2PAK)
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
Single FETs, MOSFETs datasheet and documents for FQI17N08TU
Single FETs, MOSFETs Overview
The FQI17N08TU is an N-Channel enhancement mode power field-effect transistor manufactured by Fairchild Semiconductor. It utilizes planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. The device features a maximum drain-source voltage of 80V, a continuous drain current of 12.9A, and a maximum on-resistance of 0.115 ohms. It is housed in a TO-252 (DPAK) package with the case connected to the drain.
Single FETs, MOSFETs Feature Summary
- Planar stripe DMOS technology for minimized on-state resistance
- Superior switching performance capabilities
- High energy pulse withstand capability in avalanche and commutation modes
Single FETs, MOSFETs Applications
- Low voltage automotive applications
- High efficiency DC/DC converter switching
- DC motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix TU against official Fairchild or ON Semiconductor documentation to confirm exact packaging and tape-and-reel specifications. Ensure compliance requirements match project needs, as some variants may not be RoHS compliant. Confirm thermal management requirements align with the TO-252 package characteristics.
Single FETs, MOSFETs Selection Notes
Select this component for low-voltage applications requiring high efficiency and robust switching performance. The 80V rating and 12.9A current capacity suit automotive and DC/DC converter designs. Consider the TO-252 package for its balance of thermal performance and board space efficiency compared to larger through-hole options.
Single FETs, MOSFETs Part Context
Fairchild Semiconductor is a leader in MOSFET technology for power transmission and conversion. The FQI17N08TU belongs to their N-Channel family, leveraging advanced silicon technology for smaller chip sizes and industry-standard thermal packages. This positions it within a broader portfolio designed for AC-DC and DC-DC design optimization.
Single FETs, MOSFETs Replacement Considerations
The FQD17N08TM and FQPF17N08L share identical electrical parameters including 80V, 12.9A, and 0.115 ohm Rds(on). Verify package compatibility (TO-252 vs TO-220F) and lead-free status before substitution.
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