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FQP20N06 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 20A TO220-3. Review the specifications below when checking this part for your BOM.
The onsemi FQP20N06 is an N-channel enhancement mode Power MOSFET belonging to the QFET series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A. The device utilizes a TO-220 package for through-hole mounting, offering a low on-resistance of 60 mΩ. Key electrical characteristics include a gate threshold voltage range of 1 V to 4 V and a typical gate charge of 18 nC at 10 V. It operates within a temperature range of -55 °C to +175 °C junction temperature.
Verify the specific ordering suffix against official datasheets to confirm pinout and packaging variations. Ensure compliance with RoHS directives if required by the target application. Cross-reference manufacturer part numbers with distributor listings to validate authenticity and traceability before finalizing procurement decisions.
Select this component for applications requiring robust N-channel switching at 60 V with moderate current handling. Evaluate thermal requirements based on the TO-220 package's heat dissipation capabilities. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds and minimize power losses during transitions.
This device is part of onsemi's QFET family, designed for general-purpose power switching. It complements other discrete semiconductors in the portfolio by offering a balance of voltage rating and current capacity in a standard through-hole package suitable for prototyping and industrial equipment.
Consult official substitution guides for compatible alternatives. Verify that any substitute matches the 60 V rating, 20 A current capability, and TO-220 footprint to maintain circuit integrity without redesign.
The maximum operating junction temperature is +175 °C.
Yes, the device features enhanced avalanche ruggedness as part of its QFET technology design.
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