Single FETs, MOSFETs FQP20N06 product image

FQP20N06

  • Description:MOSFET N-CH 60V 20A TO220-3
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube

SKU:ae577a0f1e09 Category: Brand:

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FQP20N06 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 60V 20A TO220-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for FQP20N06

  • Description:MOSFET N-CH 60V 20A TO220-3
  • Series:QFET®
  • Mfr:onsemi
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:60mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:590 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):53W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220-3
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for FQP20N06

FQP20N06

Single FETs, MOSFETs Overview

The onsemi FQP20N06 is an N-channel enhancement mode Power MOSFET belonging to the QFET series. It features a maximum drain-source voltage of 60 V and a continuous drain current of 20 A. The device utilizes a TO-220 package for through-hole mounting, offering a low on-resistance of 60 mΩ. Key electrical characteristics include a gate threshold voltage range of 1 V to 4 V and a typical gate charge of 18 nC at 10 V. It operates within a temperature range of -55 °C to +175 °C junction temperature.

Single FETs, MOSFETs Feature Summary

  • QFET technology provides optimized performance with low on-resistance for efficient power switching.
  • Enhanced avalanche ruggedness supports reliable operation in inductive load applications.
  • TO-220 package design facilitates effective thermal dissipation for high-current scenarios.

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control circuits
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official datasheets to confirm pinout and packaging variations. Ensure compliance with RoHS directives if required by the target application. Cross-reference manufacturer part numbers with distributor listings to validate authenticity and traceability before finalizing procurement decisions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring robust N-channel switching at 60 V with moderate current handling. Evaluate thermal requirements based on the TO-220 package's heat dissipation capabilities. Compare gate charge specifications against driver capabilities to ensure optimal switching speeds and minimize power losses during transitions.

Single FETs, MOSFETs Part Context

This device is part of onsemi's QFET family, designed for general-purpose power switching. It complements other discrete semiconductors in the portfolio by offering a balance of voltage rating and current capacity in a standard through-hole package suitable for prototyping and industrial equipment.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify that any substitute matches the 60 V rating, 20 A current capability, and TO-220 footprint to maintain circuit integrity without redesign.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature for the FQP20N06?

The maximum operating junction temperature is +175 °C.

Does the FQP20N06 support avalanche energy ratings?

Yes, the device features enhanced avalanche ruggedness as part of its QFET technology design.

FQP20N06FQP20N06

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